INJECTION-FIELD STRUCTURE MADE BY DOUBLE DIFFUSION OF IMPURITIES

In the 80s of last century, integrated injection logic (I2L) was widely used as an elementbase. Somewhat later, in development I2L, injection-field (IPL) appeared for constructionof VLSI. Both element bases are close degree integration on a chip. An increase inthe into VLSI can be achieved using self-displacement regions, which theintroduction impurities different types is carried out single boundary maskingmaterial. this paper, principle to create vertical channel key field-effect transistorof IPL logic. p-type epitaxial film deposited n+-type substrate, n-type region with adepth greater than thickness sequentially created first, and then impuritydiffusion performed same window creation p-type. The gap betweenthese regions transistor being formed. Next, shallow n+-typeregion that overlaps channel, drain transistorwith diffusion gate, uniformly alloyed theepitaxial performs function injector. Branching along outlet structure isprovided by placing several drains perimeter channel. Due geometry, thestructure has reproducibility parameters compared basic design IPL. Topologicalvariants implementation cell schemes based it considered:schemes 6 OR-NOT Dt-trigger. proposed technological version cellcan recommended creating high